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Nonlinear Transistor Model Parameter Extraction Techniques

By: (Edited by) Christian Fager , (Edited by) David E. Root , (Edited by) Matthias Rudolph

Publisher Out of Stock

Ksh 22,150.00

Format: Hardback or Cased Book

ISBN-10: 0521762103

ISBN-13: 9780521762106

Series: The Cambridge RF and Microwave Engineering Series

Publisher: Cambridge University Press

Imprint: Cambridge University Press

Country of Manufacture: GB

Country of Publication: GB

Publication Date: Oct 13th, 2011

Print length: 366 Pages

Weight: 860 grams

Dimensions (height x width x thickness): 25.20 x 17.90 x 2.20 cms

Product Classification: Transistors
Microwave technology

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Achieve accurate and reliable parameter extraction using a broad range of techniques and methods provided. Experts from industry and academia present real-world examples and insights into key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects.
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

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